Optoelectronic modules including optoelectronic device subassemblies and methods of manufacturing the same

ABSTRACT

The present disclosure describes wafer-level processes for fabricating optoelectronic device subassemblies that can be mounted, for example, to a circuit substrate, such as a flexible cable or printed circuit board, and integrated into optoelectronic modules that include one or more optical subassemblies stacked over the optoelectronic device subassembly. The optoelectronic device subassembly can be mounted onto the circuit substrate using solder reflow technology even if the optical subassemblies are composed of materials that are not reflow compatible.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims the benefit of priority of U.S. ProvisionalApplication No. 62/459,223 filed on Feb. 15, 2017; U.S. ProvisionalApplication No. 62/459,245 filed on Feb. 15, 2017; U.S. ProvisionalApplication No. 62/408,183 filed on Oct. 14, 2016; and U.S. ProvisionalApplication No. 62/356,161 filed on Jun. 29, 2016.

FIELD OF THE DISCLOSURE

The present disclosure relates to optoelectronic modules includingoptoelectronic device subassemblies and methods for their manufacture.

BACKGROUND

Optoelectronic modules that include optoelectronic devices such asoptical signal sensors and/or emitters can be integrated, for example,into various types of consumer electronics and other devices such asmobile phones, smart phones, personal digital assistants (PDAs), tabletcomputers and laptops, as well as other electronic devices, such as biodevices, mobile robots, and surveillance cameras, among others.

Wafer-level processes can be advantageous because they allow multiplecomponents to be fabricated at the same time (i.e., in parallel). Inthis context, a wafer refers to a substantially disk- or plate-likeshaped item, whose extension in one direction (e.g., z-direction orvertical direction) is small with respect to its extension in the othertwo directions (e.g., x- and y- or lateral directions). In some cases,wafer-level processes can facilitate tens, hundreds or even thousands ofidentical components to be fabricated in each lateral direction of thewafers.

SUMMARY

The present disclosure describes wafer-level processes for fabricatingoptoelectronic device subassemblies (e.g., optical sensor or emitterdevice subassemblies) that can be mounted, for example, to a circuitsubstrate, such as a flexible cable or printed circuit board (PCB), andintegrated into optoelectronic modules that include one or more opticalsubassemblies stacked over the optoelectronic device subassembly.

The techniques can, in some instances, help overcome problems that mayotherwise occur when solder reflow processes are used to mount theoptoelectronic device subassemblies. For example, by mounting theoptoelectronic device subassembly to the circuit substrate prior toattaching the optical subassemblies to the optoelectronic devicesubassembly, the optical subassemblies need not be subjected to the hightemperatures used during solder reflow. This can be advantageous, forexample, where the materials used for the optical subassemblies are notable to withstand the relatively high temperatures that are sometimesused during the solder reflow process.

In one aspect, for example, the present disclosure describes a method ofmanufacturing an optoelectronic module. The method includes fabricatingoptoelectronic device subassemblies in a wafer-level process, mounting asingulated one of the optoelectronic device subassemblies onto a circuitsubstrate, and subsequently attaching one or more optical subassembliesto the optoelectronic device subassembly.

Some implementations include one or more of the following features. Forexample, in some cases, mounting the singulated optoelectronic devicesubassembly onto the circuit substrate includes using solder reflowtechnology. Thus, in some instances, even though the one or more opticalsubassemblies are composed of materials that are not reflow compatible,the optoelectronic device subassembly can be mounted onto the circuitsubstrate using solder reflow technology. In some cases, mounting thesingulated optoelectronic device subassembly onto the circuit substrateincludes performing one or more processes at relatively hightemperatures (e.g., as high as 260° C.). Mounting the optoelectronicdevice subassembly can include, for example, mounting it onto a flexiblecable.

In some cases, attaching one or more optical subassemblies to theoptoelectronic device subassembly includes attaching at least twooptical subassemblies in a stack over the optoelectronic devicesubassembly. In some implementations, the optical subassembliesthemselves are manufactured in wafer-level processes. The opticalsubassemblies can be singulated before attaching them to theoptoelectronic subassemblies. In some instances, the opticalsubassemblies include a light guide, an optical diffuser and/or an IRabsorber.

In some implementations, attaching one or more optical subassemblies tothe optoelectronic device subassembly includes placing at least one ofthe optical subassemblies onto a ledge of the optoelectronic devicesubassembly. Some implementations include placing a first one of theoptical subassemblies onto a first ledge of the optoelectronic devicesubassembly and placing a second one of the optical subassemblies onto asecond ledge of the optoelectronic device subassembly.

In another aspect, a wafer-level method of manufacturing optoelectronicdevice subassemblies includes providing a substrate on whichoptoelectronic devices are mounted. Trenches are formed in respectivetrenches in respective regions of opaque encapsulant that separateadjacent ones of the optoelectronic devices from one another. Eachtrench extends at least partially through the opaque encapsulant, whichis substantially opaque to a wavelength or range of wavelengths ofradiation emitted by or detectable by the optoelectronic devices. Themethod further includes dicing the substrate at locations of thetrenches so as to form singulated optoelectronic device subassemblieseach of which includes at least one of the optoelectronic devicessurrounded laterally by the opaque encapsulant.

Formation of the trenches can, in some instances, be implemented asstress release dicing to help improve reliability. In some instances,prior to dicing the substrate into singulated optoelectronic devicesubassemblies, some of the opaque encapsulant at upper edges of eachtrench is removed so as to form steps adjacent the trench. Formation ofthe steps adjacent the trenches can, in some cases, help provide spacefor excess adhesive to flow when an optical subassembly subsequently ismounted to the optoelectronic device subassembly.

Some implementations include one or more of the following features. Forexample, the method can include providing a protective covering overwiring for the optoelectronic devices. The protective covering caninclude, for example, a PDMS coating or an epoxy containing an oxidefiller. In some instances, after providing the protective covering forthe wiring, but before forming the respective trenches in the opaqueencapsulant, a transparent encapsulant is provided over the substrate,including the optoelectronic devices. The transparent encapsulantpreferably is substantially transparent to a wavelength or range ofwavelengths of radiation emitted by or detectable by the optoelectronicdevices. The transparent encapsulant can be removed from regions wherethe opaque encapsulant is to be provided, and then the opaqueencapsulant can be provided in regions where the transparent encapsulantwas removed. In some cases, at least one of the transparent encapsulantor opaque encapsulant is provided by a vacuum injection technique.

In some instances, the method includes mounting at least one of thesingulated optoelectronic device subassemblies on a printed circuitboard or flexible substrate. The singulated optoelectronic devicesubassembly can be mounted, for example, using a solder reflow processand may include elevated temperatures (e.g., as high as 260° C.).

Various examples are described in greater detail below. Other aspects,features and advantages will be readily apparent from the followingdetailed description, the accompanying drawings and the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a first example of an optoelectronic module.

FIG. 1B is a second example of an optoelectronic module.

FIG. 2 is a flow chart for fabrication of optoelectronic modules such asthose illustrated in FIGS. 1A and 1B.

FIG. 3 is a flow chart for fabrication of optoelectronic devicesubassemblies.

FIGS. 4A through 4H illustrates various stages in the fabricationprocess for the optoelectronic device subassemblies.

DETAILED DESCRIPTION

FIGS. 1A and 1B illustrate examples of optoelectronic modules that canbe fabricated in accordance with the processes described here. As shownin FIG. 1A, an optoelectronic module 20A includes an optoelectronicdevice subassembly 22 mounted on a circuit substrate 24 such as aflexible circuit cable or other printed circuit board. Theoptoelectronic device subassembly 22 can include, for example, an activeoptoelectronic device 28 such as a light sensor (e.g., a photodiode, ora CCD or CMOS sensor) that includes radiation sensitive elements (e.g.,pixels). In some cases, the optoelectronic device 28 includes a lightemitter (e.g., light emitting diode (LED), infra-red (IR) LED, organicLED (OLED), infra-red (IR) laser or vertical cavity surface emittinglaser (VCSEL). In some cases, the optoelectronic device 28 isimplemented as an integrated circuit (IC) semiconductor chip or as anapplication-specific integrated circuit (ASIC) semiconductor chip. Toprotect electrically conductive connections (e.g., wiring) 29 for theoptoelectronic device 28, the wiring 29 can be covered, for example, bya protective covering 30 such as a polydimethylsiloxane (PDMS) spraycoating, or a curable epoxy containing an oxide filler (e.g., SiO₂,Al₂O₃, or TiO₂). In the latter case, the epoxy can be cured afterdispensing it over the wiring 29.

As further illustrated in FIG. 1A, the module 20A includes an opticalsubassembly (e.g., an optical diffuser or infra-red (IR) absorber) 26.The optical subassembly 26 is disposed over the optoelectronic devicesubassembly 22 and can rest on a support spacer or ledge 32 that isintegrally formed as a unitary piece with the walls 34 of theoptoelectronic device subassembly 22. Thus, the walls 34 and ledge 32can be composed of the same material (e.g., a black epoxy). In somecases, the support spacer or ledge 32 is annular shaped.

In the illustrated example, the optical subassembly 26 includes a stackof one or more optical elements 40 separated from one another bymicro-spacers 42. In some implementations, the optical elements 40include a dielectric filter or interference filter designed to operatein contact with a material having a particular refractive index (e.g.,air or vacuum). Further, in some implementations, the optical elements40 are polymer-based filters (e.g., IR absorbers). In someimplementations, the optical elements 40 are diffusers (e.g., diffuserfoils) designed to operate in contact with a material of a particularrefractive index (e.g., air or vacuum).

In the illustrated example, the optical elements 40 are separated fromone another by small air or vacuum gaps. The micro-spacers 42 separatethe optical elements 40 from one another and establish a small fixeddistance between them. Each of the micro-spacers 42 can have, forexample, an annular shape or a closed rectangular loop shape thatlaterally surrounds an air or vacuum gap.

FIG. 1B illustrates an optoelectronic module 20B that, like the module20A of FIG. 1A, includes a optoelectronic device subassembly 22A mountedon a circuit substrate 24 such as a flexible circuit cable or other PCB.Disposed over the optoelectronic device subassembly 22A is a stack ofoptical subassemblies, including a first optical subassembly 26A, alight guide 30 and a second optical subassembly 26B. Some details of theoptoelectronic device subassembly 22A of FIG. 1B are similar to thosedescribed above with respect to the optoelectronic device subassembly 22of FIG. 1A, but the optoelectronic device subassembly 22A includes afirst support spacer or ledge 32 on which a first optical subassembly26A rests and a second support ledge 32B on which a light guide 30rests. In some cases, the support ledges 32, 32B are annular shaped.Each of the optical subassemblies 26A, 26B can include a stack of one ormore optical elements 40 separated from one another by micro-spacers 42.Details of the optical elements 40 and micro-spacers 42 can be similarto those described above in connection with FIG. 1A.

As illustrated in FIG. 2, the modules 20A, 20B can be fabricated, forexample, as follows. Optoelectronic device subassemblies, such as thesubassembly 22 (or 22A), can be fabricated as part of a wafer-levelprocess (202). A singulated optoelectronic device subassembly then canbe mounted to a circuit substrate (e.g., a flexible cable or otherprinted circuit board) (204). In some instances, mounting theoptoelectronic device subassembly on the circuit substrate may involveusing reflow solder technology at relatively high temperatures (e.g., ashigh as 260° C.). After mounting the optoelectronic device subassemblyto the circuit substrate, one or more optical subassemblies (e.g.,optical diffusers, IR absorbers, light guides) are disposed over, andattached to, the optoelectronic device subassembly (206). Examples ofthe optical subassemblies are indicated by 26 (FIG. 1A) and 26A, 26B, 30(FIG. 1B). The optical subassemblies can be placed over theoptoelectronic device subassembly, for example, by pick-and-placeequipment and attached, for example, by an adhesive.

By mounting the optoelectronic device subassembly to the circuitsubstrate prior to attaching the optical subassemblies to theoptoelectronic device subassembly, the optical subassemblies need not besubjected to the relatively high temperatures used during solder reflow.This can be advantageous because, in some cases, the materials used forthe optical subassemblies are not able to withstand the temperaturesused during the solder reflow process.

An example of further details for the wafer-level fabrication ofoptoelectronic device subassemblies (202 in FIG. 2) is provided in FIG.3. As indicated by 302 in FIG. 3 and as shown in FIG. 4A, a protectivecovering 404 is provided over the wiring 29 for the optoelectronicdevices (e.g., light sensors or light emitters) 28 mounted on a PCB orother wafer 400. In some instances, the covering 404 is composed of PDMSdispensed (e.g., by spray coating) over the wiring 29. In some cases,the PDMS is provided over the optoelectronic components 28 as well asother integrated circuit chips 403 that may be mounted on the wafer 400and coupled to the optoelectronic components 28. In some instances, theprotective covering 404 over the wires 29 is composed of an epoxycontaining an oxide filler (e.g., SiO₂, Al₂O₃, or TiO₂). The addition ofthe filler can help increase the mechanical stability of the epoxy.However, as the addition of SiO₂ or other oxide may decrease thetransparency of the epoxy, the optoelectronic devices 28 themselvesshould not be covered with the epoxy. The wafer 400 can be supported,for example, on a support substrate 402.

As indicated by 304 in FIG. 3 and as shown in FIG. 4B, the wafer 400then is placed in a vacuum injection molding tool 406, and transparentencapsulant 408 is injected so as to cover the wafer 400, including theoptoelectronic devices 28 mounted thereon. The transparent encapsulant408 is substantially transparent to a wavelength or range of wavelengthsof radiation emitted by or detectable by the optoelectronic devices 28.The encapsulant 408 then can be hardened, for example, by thermal or UVcuring. Next, after removing the wafer 400 from the vacuum injectiontool 406, trench dicing is performed to form gaps 410 between adjacentones of the optoelectronic devices 28 (see FIG. 4C, and 306 in FIG. 3).

As indicated by 308 in FIG. 3 and as shown in FIG. 4D, the wafer 400then is placed into another vacuum injection tool 412, and an opaqueencapsulant 414 is injected into the gaps 410. The opaque encapsulant414, which is substantially opaque to a wavelength or range ofwavelengths of radiation emitted by or detectable by the optoelectronicdevices 28, substantially fills the gaps (410) between adjacent ones ofthe optoelectronic devices 28. The encapsulant 414 then can be hardened,for example, by thermal and/or UV curing.

After removing the wafer 400 from the vacuum injection tool 412, stressrelease dicing is performed to form a trench 416 in each region of theopaque encapsulant 414 (see FIG. 4E, and 310 in FIG. 3). At this stageof the process, the trench 416 extends partially through the opaqueencapsulant 414, but preferably the bottom of the trench does not reachthe upper surface of the wafer 400. Such stress release dicing can, insome instances, help improve reliability.

In some implementations, as indicated by 312 in FIG. 3 and as shown inFIG. 4F, a further trench dicing process is performed to form “overflow”steps 418 at the edges of each region of opaque encapsulant 414. Thus,steps 418 are formed adjacent either side of each trench 416. Theoverflow steps 418 can help provide space for excess glue or otheradhesive to flow when an optical subassembly 26 (or 26A) subsequently ismounted to the optoelectronic device subassembly 420.

Next, as indicated by 314 in FIG. 3 and as shown in FIG. 4G, furtherdicing is performed so as to singulate the optoelectronic devicesubassemblies 420 from one another. This additional dicing 314 can beperformed at the locations of the trenches 416 (i.e., along the stressrelease lines) previously formed during the stress release dicing step310. The dicing 314 is performed through the opaque encapsulant 414 andthrough the wafer substrate 400, thereby singulating the wafer 400 intomultiple optoelectronic device subassemblies 420. As indicated by 316 inFIG. 3 and as shown in FIG. 4H, each singulated optoelectronic devicesubassembly 420 then can be mounted, for example, on a flexible PCB orother substrate 422. Reflow processes may be used to mount theoptoelectronic device subassemblies 420 to the substrates 422.

Various modifications can be made to the implementations describedabove, and features described or shown in connection with differentimplementations can, in some cases, be included in the sameimplementation. Accordingly, other implementations are within the scopeof the claims.

What is claimed is:
 1. A method of manufacturing an optoelectronicmodule, the method comprising: mounting a singulated optoelectronicdevice subassembly onto a circuit substrate using solder reflowtechnology; and subsequently attaching one or more optical subassembliesto the optoelectronic device subassembly that is mounted on the circuitsubstrate.
 2. The method of claim 1 wherein the one or more opticalsubassemblies are composed of materials that are not reflow compatible.3. The method of claim 1 wherein mounting a singulated one of theoptoelectronic device subassemblies onto a circuit substrate includesmounting the singulated optoelectronic device subassembly onto aflexible cable.
 4. The method of claim 1 wherein mounting a singulatedone of the optoelectronic device subassemblies onto a circuit substrateis performed at a temperature of at least 260° C.
 5. The method of claim1 wherein attaching one or more optical subassemblies to theoptoelectronic device subassembly includes attaching at least twooptical subassemblies in a stack over the optoelectronic devicesubassembly mounted on the circuit substrate.
 6. The method of claim 5wherein the at least two optical subassemblies include a light guide andat least one optical diffuser or IR absorber.
 7. A method ofmanufacturing an optoelectronic module, the method comprising: mountingan optoelectronic device subassembly onto a circuit substrate; andsubsequently attaching one or more optical subassemblies to theoptoelectronic device subassembly that is mounted on the circuitsubstrate, wherein the one or more optical subassemblies include atleast one optical diffuser or IR absorber.
 8. The method of claim 7wherein attaching one or more optical subassemblies to theoptoelectronic device subassembly includes placing at least one of theoptical subassemblies onto a ledge of the optoelectronic devicesubassembly.
 9. The method of claim 7 wherein attaching one or moreoptical subassemblies to the optoelectronic device subassembly includesplacing a first optical subassembly onto a first ledge of theoptoelectronic device subassembly and placing a second opticalsubassembly onto a second ledge of the optoelectronic devicesubassembly.
 10. The method of claim 7 wherein mounting the singulatedoptoelectronic device subassembly onto the circuit substrate includesusing solder reflow technology, and wherein the one or more opticalsubassemblies are composed of materials that are not reflow compatible.11. The method of claim 7 wherein the one or more optical subassembliesinclude a dielectric filter.
 12. The method of claim 7 wherein the oneor more optical subassemblies include an interference filter.
 13. Themethod of claim 7 wherein the one or more optical subassemblies includea diffuser foil.
 14. The method of claim 7 wherein the one or moreoptical subassemblies include a light guide.
 15. The method of claim 7wherein the one or more optical subassemblies include an IR absorber.